National University of Singapore scientists have discovered a method for photoinduced electron doping on molybdenum ditelluride (MoTe2) heterostructures for fabricating next generation logic devices.
Two-dimensional (2-D) transition metal dichalcogenides (TMDs) are promising building blocks for the development of next generation electronic devices. These materials are atomically thin and exhibit unique electrical properties. Researchers are interested to develop n- and p-type field effect transistors (FET) using the 2-D TMDs for building fundamental logic circuit components. These components include p-n junctions and inverters.