A technique that introduces carbon-hydrogen molecules into a single atomic layer of the semiconducting material tungsten disulfide dramatically changes the electronic properties of the material, according to Penn State researchers at Penn State who say they can create new types of components for energy-efficient photoelectric devices and electronic circuits with this material.
“We have successfully introduced the carbon species into the monolayer of the semiconducting material,” said Fu Zhang, doctoral student in materials science and engineering lead author of a paper published online today in Science Advances.
Prior to doping—adding carbon—the semiconductor, a transition metal dichalcogenide (TMD), was n-type—electron conducting. After substituting carbon atoms for sulfur atoms, the one-atom-thick material developed a bipolar effect, a p-type—hole—branch, and an n-type branch. This resulted in an ambipolar semiconductor.